Dresden 2009 – wissenschaftliches Programm
DS 11.6: Vortrag
Dienstag, 24. März 2009, 15:15–15:30, GER 37
In-situ investigations of the atomic layer deposition of HfO2 with UHV/AFM — •Krzysztof Kolanek, Konstantin Karavaev, Massimo Tallarida, and Dieter Schmeisser — Brandenburgische Technische Universität, LS Angewandte Physik-Sensorik, Konrad-Wachsmann-Allee, 17, 03046, Cottbus, Germany
We studied in-situ the atomic layer deposition (ALD) of HfO2 with ultra high vacuum (UHV) atomic force microscope (AFM), using the ALD reactor developed by our group [1, 2]. The reactor was attached to the Omicron Large Sample-UHV/AFM system in the AFM-Lab of the Angewandte Physik-Sensorik chair at the BTU-Cottbus. We investigated different Si(001)/SiO2 substrates and surface preparation techniques performed before the ALD process. After each ALD cycle (using TDMAHf and H2O as precursors), we studied the influence of the HfO2 growth on the root mean square (RMS) roughness; the surface fractal dimension and the height histogram: the surface skewness and kurtosis. We focused on the influence of the substrate temperature on the surface topography during the ALD. The in-situ studies of the ALD process with the UHV/AFM system correlated with the experiments performed with photoelectron spectroscopy can be used for understanding the fundamental properties of the ALD of HfO2 on Si(001).
 M. Tallarida, K. Karavaev, and D. Schmeisser, J. Appl. Phys. 104, 064116 (2008);  M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B, accepted for publication.