Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 16: Poster I

DS 16.1: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Novel dielectric surface modifications for high-performance perylene based thin-film-transistors — •Christian Effertz1, Ingolf Segger1, Philip Schulz1, Stefan Lahme1, Matthias Wuttig1, Arno Classen2, Gregor Darlinski3, and Rainer Waser31Institute of Physics (IA), RWTH Aachen University, 52056 Aachen, Germany — 2Institute of Organic Chemistry, RWTH Aachen University, 52056 Aachen, Germany — 3Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52056 Aachen, Germany

Organic Thin-Film Transistors (OTFTs) are intensely studied due to their adaptability, e.g. as an active matrix for flexible displays or in low-cost RFID tags. Recent reports indicate that OTFTs can match their inorganic counterparts based on hydrogenated amorphous silicon (a-Si:H) in terms of mobility and on/off-current-ratio. We have shown that dielectic surface modifictions (DSM) can improve the performance of OTFTs dramatically. The use of the organic chainmolecule octadecyltrichlorosilane (OTS) is leading to transistors with superior performance. In order to both gain a deeper insight into the phenomenon of performance enhancement and to facilitate high mobility transistors, perylene-based devices utilizing novel DSM have been studied. The employed surface modifications are based on a) derivates of OTS with differently modified end-groups and b) a polymeric dielectric (PDMS) with a chain length comparable to OTS. The OTFTs were characterized by temperature-dependent electronic measurements, scanning probe microscopy and x-ray diffraction (XRD).

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