Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 16: Poster I

DS 16.2: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Trap-state influence on charge carrier transport in dielectric surface modified OTFTs — •Ingolf Segger, Christian Effertz, Stefan Lahme, Philip Schulz, and Matthias Wuttig — Institute of Physics (IA), RWTH Aachen University, 52056 Aachen, Germany

Organic Thin Film Transistors (OTFT) offer a promising alternative to amorphous silicon technology, as they show a comparable performance regarding the carrier mobility and the Ion/Ioff-ratio. In contrast to inorganic semiconductors, organic materials can be processed using low-cost techniques such as vacuum-evaporation at room temperature or spin-coating from a solution. These processes allow the deposition of organic thin-films on flexible substrates, as needed for several applications, e. g. flexible displays as used in E-Paper.

In order to gain insight into the carrier transport in OTFTs, we have focussed on the influence of interfacial and bulk-like trap states on the transfer characteristics of perylene-based TFTs, in particular in the sub-threshold region. Perylene thin films are deposited by thermal evaporation on top of thermally grown SiO2, which is surface-modified with different organic-based chain molecules to vary density and type of interfacial trap states. Both film properties and device characteristics have been studied employing a range of techniques including atomic force microscopy, x-ray diffraction and temperature-dependant electronic measurements.

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