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DS: Fachverband Dünne Schichten

DS 16: Poster I

DS 16.27: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

Mechanical characterization of nanoscale silicon structures — Sven Niese¹, Michael Hecker¹, Yvonne Ritz¹, Ehrenfried Zschech¹, Paul S. Ho², and •Zhiquan Luo² — ¹AMD Fab 36 LLC & Co. KG Dresden, Wilschdorfer Landstraße 101, D-01109 Dresden, Germany — ²Microelectronics Research Center, University of Texas; Austin, Texas 78712

Mechanical properties of nanoscale silicon structures are of high relevance for leading-edge and future CMOS devices. In particular for interconnect copper-filled structures, deep trenches with high aspect ratio, rectangular cross sections and nearly atomically flat sidewalls are needed. Such structures have been manufactured with varying geometry, e.g. line widths and trench depths, by electron beam lithography and anisotropic wet etching. We evaluated techniques for in-situ characterization of mechanical properties on a single silicon lamella with a force sensor in a SEM. Unusual mechanical properties, deviating from those of silicon bulk material, have been derived. The results are compared with those of finite element analysis. Apart from the mechanical properties, the particular optical properties of the trench structures where investigated by Raman spectroscopy. Significant enhancements of the Raman scattering related to the geometry were analyzed. These effects are important for stress measurements on nanoscaled strained silicon structures.