Dresden 2009 – wissenschaftliches Programm
DS 16.28: Poster
Dienstag, 24. März 2009, 09:30–12:30, P5
Interface Trap Density Extraction from Capacity- and Current-Voltage Measurements of Leaky High Dielectric Films — •Thomas Zilbauer, Torsten Sulima, Hermann Baumgärtner, and Ignaz Eisele — Universität der Bundeswehr München, Institut für Physik, 85577 Neuiberg
The voltage dependent capacity and current measurement of high dielectric oxides on silicon substrates is a powerful tool for electrical characterization of the insulating thin film. Parameters such as the equivalent oxide thickness, the flatband voltage or the interface trap density and distribution can be extracted from C(V)-G(V)-measurements. However, uncertainties arise from difficulties in obtaining the correct insulator capacity and from the question whether assumptions made for the conventional extraction of interface trap density with SiO2 hold with high-k materials.
We suggest a simple method of determining interface trap density of a leaky HfO2 film using the C(V)-G(V)-measurement at only one frequency. Based on experimental results we will prove the implied assumption of a Gaussian distributed, frequency normalized interface trap conductance depending on band bending and present typical parameters needed for interface trap density extraction.