Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 16: Poster I

DS 16.6: Poster

Dienstag, 24. März 2009, 09:30–12:30, P5

A microstructural investigation of components of bottom-gate bottom-contact organic thin-film transistors to improve their performance — •Tossapol Tippo¹, Chanchana Thanachayanont², Steffen Schulze³, Michael Hietschold³, and Apinunt Thanachayanont¹ — ¹Faculty of Engineering and College of Data Storage Technology and Applications, King Mongkut's Institute of Technology Ladkrabang, Chalongkrung Road, Ladkrabang Bangkok 10520, Thailand — ²National Metal and Materials Technology Center, Thailand Science Park, Klong 1, Klong Luang, Pathumthani 12120, Thailand — ³Chemnitz University of Technology, Solid Surface Analysis Group, D-09107 Chemnitz, Germany

Organic thin film transistors (OTFTs) were fabricated on glass substrate with a gate aluminum contact using evaporation in high-vacuum. Patterning was conducted by metallic mask. Gate dielectric poly(methyl methacrylate) (PMMA) was spin-coated via thin-film solution process. Source-drain gold contacts were patterned by metallic mask and thermal evaporation, respectively. Finally, pentacene organic semiconductor was thermally evaporated. Electrical characteristics were measured by using a source measure unit. The OTFTs demonstrated drain currents in the order of microamperes. All measurements and characterizations of OTFTs comply with the IEEE 1620TM standard test methods. We conduct cross-sectional and plan-view investigations of OTFT components by Scanning Electron Microscopy and EDX to relate the thin films and interfaces morphologies and compositions to the performance of the OTFTs in order to improve it.