Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 2: Thin Film Characterisation: Structure Analyse and Composition (XRD, TEM, XPS, SIMS, RBS, ...) II
DS 2.6: Vortrag
Montag, 23. März 2009, 15:15–15:30, GER 37
Gracing incidence FTIR of thin high-k dielectrics — •Wenke Weinreich1, Johannes Müller1, Martin Rose1, Lutz Wilde1, Martin Lemberger2, Marco Steinert3, and Uwe Schröder3 — 1Fraunhofer CNT, Dresden, Germany — 2Fraunhofer IISB, Erlangen, Germany — 3Qimonda, Dresden, Germany
High-k dielectrics are under intensive study for transistor and memory applications. The crystallinity mainly determines the permittivity and, thereby, the electrical performance of the built capacitor. We will present a new method that uses a common Fourier transform infrared spectroscopy (FTIR) in a gracing incidence configuration to investigate the crystallization behaviour of thin 6 to 10 nm dielectric films. The advantage of this standard FTIR technique is the enhanced spectral range compared to attenuated total reflection (ATR)-FTIR which is generally used to analyze especially thin films. More precisely, the required ATR-FTIR method for dielectrics would only provide 670 cm−1 as minimum wavelength. In this study, ideal measuring settings for standard FTIR are identified and the investigation of thin films annealed at various temperatures is performed. Phase analysis, crystallization temperature and the influence of doping concentration on the structure of dielectrics and, especially, on the phase stabilization are determined. The studied material systems are Al- or Si-doped ZrO2 and HfO2, and also TiO2 grown by atomic layer deposition. It will be shown that the analysis can be done on different substrates if suitable references for the background measurement are available. The obtained results are correlated to gracing incidence X-ray diffraction.