Parts | Days | Selection | Search | Downloads | Help
DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.11: Poster
Wednesday, March 25, 2009, 09:30–12:30, P5
Deposition of SiOx thin films by microwave excited plasma jet — •Manuela Janietz and Thomas Arnold — Leibniz-Institut für Oberflächenmodifizierung, Leipzig
Thin silicon suboxide (SiOx) films are deposited on silicon substrates using an atmospheric-pressure plasma jet that consists of two coaxial tubes. The feeding gases helium and oxygen in the inner capillary and nitrogen with small admixtures of hexamethyldisiloxane (HMDSO) vapor in the outer tube are excited by a pulsed microwave (2.45 GHz) and directed onto the substrate. Typical deposition rates range from 2·10−5 to 1.5·10−4 mm3/s depending on plasma parameters. Stable and smooth films of several hundred nanometers thickness and refraction indices from 1.40 to 1.43 are grown and characterized using ellipsometry, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). FT-IR spectra show the presence of few Si-CH3 and Si-H groups besides dominating Si-O-Si absorption bands. XPS confirms the low carbon content in film composition.