Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.25: Poster
Mittwoch, 25. März 2009, 09:30–12:30, P5
Optical, electrical and structural characterization of novel phase change materials — •Anja Herpers, Michael Woda, and Matthias Wuttig — 1. Physikalisches Institut IA, RWTH Aachen University, Aachen, Germany
Phase Change Materials (PCM) are alloys, which can be used in a variety of applications in information technology. Information is stored using the transformation of small regions of a thin film between the crystalline and amorphous state. This phase change is accompanied by a remarkable change of properties such as the electrical resistivity and the optical reflectivity. Furthermore the transition between both states is extremely fast at elevated temperatures but negligible at room temperature. This property portfolio is attractive for storage applications. The corresponding materials are already used in rewriteable optical data storage media such as DVD and Blu-Ray-Discs, and are promising candidates for novel non-volatile electronic memory devices such as Phase Change Random Access Memories.
In this study the structural, optical and electrical properties of two materials, i.e. Ag4In3Sb67Te26 and GeSe are investigated. X-Ray diffraction and X-Ray reflection measurements reveal changes in the crystal structure and the film density upon crystallization. DSC measurements provide the crystallization temperature. The optical properties in an energy range of 0.025-5.3 eV are determined combining ellipsometry and FTIR experiments. Sheet resistance measurements in the van-der-Pauw-geometry enable the measurement of the electrical properties between 300 and 600 K.