Dresden 2009 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 26: Poster II
DS 26.28: Poster
Mittwoch, 25. März 2009, 09:30–12:30, P5
Conductivity of ion tracks in doped tetrahedral amorphous carbon. — •Hans-Gregor Gehrke1, Anne-Katrin Nix1, Johann Krauser2, Christina Trautmann3, Alois Weidinger4, and Hans Hofsäss1 — 1Georg-August Universität, Göttingen, Deutschland — 2Hochschule Harz, Wernigerode, Deutschland — 3Gesellschaft für Schwerionenforschung, Darmstadt, Deutschland — 4Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Deutschland
Conductive ion tracks in tetrahedral amorphous carbon (ta-C) are created by swift heavy ion irradiation. The aspect ratio of the nanosized filaments with a diameter of about 8 nm depends on film thickness. Our group has studied the electrical conduction behavior in the past. The dominant transport mechanism of the ion tracks at low temperatures is variable range hopping. The conductivity of the ion tracks can be altered by doping the ta-C matrix with impurities. These new defects increase the number of hopping sides.
In this work we analyzed the conductance of ion tracks in doped ta-C. The films were prepared with Mass selected ion beam deposition (MSIBD), co-depositing carbon and the desired dopend, such as copper. The dopent concentration is kept below 2 at% ensuring the high sp3 bond content of the ta-C matrix. The tracks were analyzed individually by atomic force microscopy (AFM) applying a conductive cantilever and by macroscopic measurements using metal pads to contact ensembles of tracks simultaneously. The macroscopic measurements were conducted between 20−300 K. First results comparing the conduction behavior of different impurities are presented.