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Dresden 2009 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 26: Poster II

DS 26.49: Poster

Mittwoch, 25. März 2009, 09:30–12:30, P5

In situ noise measurements on ion bombarded thin films: 1/f-noise as a fingerprint for amorphization — •Matthias Noske, Moritz Trautvetter, and Paul Ziemann — Institut für Festkörperphysik, Universität Ulm, D-89081 Ulm

As has been experimentally demonstrated, the crystalline binary alloy In2Au can be transformed into an amorphous state by low temperature ion irradiation1. This transformation can be followed by measuring the ion induced increase of the electrical resistance as a function of the ion fluence. While this increase can be attributed to the built-up of static disorder, fluctuating atomic configurations may be present as well leading to resistance fluctuation and, as a consequence, to 1/f noise. To test such a possibility, patterned AuIn2 films were irradiated with 350 keV Ar+ ions of various fluences up to 1015 ions/cm2 at 85 K. During the stepwise amorphization noise density SR spectra of the 1/f noise were taken by applying a correlation measurement technique2 allowing detection of signals below the thermal noise. It could be shown that the spectral noise density is maximal at the percolation limit whereas the resistance approaches its final value.
1 B. Heinz, P. Ziemann, Nucl. Instr. And Meth. B 132, 589 (1997).
2 A.H. Verbruggen, H. Stoll, K. Heeck, R. H. Koch, Appl. Phys. A 48, 233 (1989).

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