Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Layer Deposition Processes

DS 3.3: Talk

Monday, March 23, 2009, 16:15–16:30, GER 37

Epitaxial Growth of Ni on Si(100) Substrate by DC Magnetron Sputtering — •Wolfgang Kreuzpaintner, Michael Störmer, Dieter Lott, Danica Solina, and Andreas Schreyer — GKSS Forschungszentrum GmbH, Max-Planck-Str. 1, 21502 Geesthacht

The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the epitaxial relationship Ni[100]||Si[110] and Ni(001)||Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering will be reported. To minimize crystal defect formation and in order to achieve a high quality epitaxial growth of Ni on Si a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. In-plane and out-of-plane structural properties of the deposited films were investigated using x-ray scattering techniques whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm their magnetic nature.