Dresden 2009 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Layer Deposition Processes

DS 3.5: Talk

Monday, March 23, 2009, 16:45–17:00, GER 37

Process Conditions for Atomic Layer Deposition of HfO₂ from Alkylamides and Consequences for Reactor Design — •Thomas Zilbauer, Torsten Sulima, and Ignaz Eisele — Universität der Bundeswehr München, Institut für Physik, 85577 Neuiberg

Atomic Layer Deposition (ALD) has been established as a manufacturing process for ultra thin films with high precision of conformal thickness control due to its ability of self-terminating deposition steps. To take advantage of this process stability gain, special precursors are needed, which must be very reactive in order to allow for fast chemisorption on the substrate surface without any desorption within the deposition cycle time. This high precursor reactivity on the other hand puts stringent demands on the delivery system and the reactor to prevent preliminary precursor decomposition.

Starting from a theoretical insight into the basic of the self-terminating ALD-chemistry, we will demonstrate the challenges and limitations for reactor design on the example of HfO₂-ALD using a Hafnium Alkylamide as precursor and a commercially available reactor. Additionally, we will present suggestions on potential improvements and results from their successful implementation.