Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: Spin controlled transport I
HL 12.2: Vortrag
Dienstag, 24. März 2009, 09:45–10:00, BEY 81
Magnetic field dependence of the tunneling anisotropic magnetoresistance effect in Fe/GaAs/Au tunnel junctions — •Michael Wimmer1, Michael Lobenhofer2, Alex Matos-Abiague1, Jaroslav Fabian1, Dieter Weiss2, and Klaus Richter1 — 1Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg — 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg
Recent experiments on the tunneling anisotropic magnetoresistance (TAMR) effect in Fe/GaAs/Au tunnel junctions found a peculiar magnetic field dependence in high fields: Depending on the bias voltage, the TAMR effect may increase or decrease linearly with magnetic field.
We explain these findings by including the orbital effects of the magnetic field in a previously developed theoretical description of the TAMR effect in terms of Rashba and Dresselhaus spin-orbit coupling [1]. Both numerical simulations as well as a phenomenological model agree well with experiment. The high-field behavior is found to be dominated by an interplay between the Dresselhaus spin-orbit coupling in the GaAs barrier and the orbital effects of the magnetic field.
J. Moser et al., Phys. Rev. Lett. 99, 056601 (2007).