Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 14: Preparation and characterization

HL 14.2: Vortrag

Dienstag, 24. März 2009, 09:45–10:00, BEY 154

Kelvin probe force microscopy imaging of cross-sections of Si multilayer structures — •Christine Baumgart1, Anne-Dorothea Müller2, Falk Müller2, Manfred Helm1, Andre Möller3, and Heidemarie Schmidt11Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany) — 2Anfatec Instruments AG, Melanchthonstr. 28, 08606 Oelsnitz, Germany — 3SGS Institute Fresenius GmbH, Zur Wetterwarte 10, 01109 Dresden, Germany

Kelvin probe force microscopy (KPFM) is a standard technique for the investigation of surface potentials. We present its applicability to cross-sectionally prepared p-p+ Si multilayer structures. The contact potential difference (CPD) image between tip and sample has been recorded by means of an Anfatec Level-AFM with a 2nd amplifier and NSC15 probes from MikroMash. Using an active mixer, the excitation amplitude of the NSC15 probes is almost independent on the working frequency. The probed CPD signal difference between the layers ranges between 60 meV and 850 meV and can be correlated to the variation of the diffusion potential in the Si multilayer structure. The p-type of majority charge carriers and the corresponding acceptor dopant profile have been pinpointed by scanning capacitance measurements. Starting from the known donor dopant concentration in the NSC15 probe, we simulated the CPD and determined the acceptor concentration in the whole p-p+ Si multilayer structure. From the frequency dependence of the CPD we can clearly distinguish between surface and bulk effects.

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