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Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 16: III-V semiconductors II

HL 16.4: Vortrag

Dienstag, 24. März 2009, 10:15–10:30, POT 151

High Excitation Photoluminescence studies on epitaxially grown AlN layers — •Robert Anton Richard Leute1, Martin Feneberg1, Klaus Thonke1, Rolf Sauer1, Sarad Bahadur Thapa2, Ferdinand Scholz2, Yoshitaka Taniyasu3, and Makoto Kasu31Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany — 3NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakiyama, Atsugi, 243-0198, Japan

Nominally undoped high quality AlN layers are investigated by lowtemperature photoluminescence (PL) spectroscopy, using the focused beam of an ArF Excimer Laser (193 nm) for excitation. For samples grown by MOVPE on different substrates, namely sapphire and SiC, different types of spectra are found. Comparison with low excitation photoluminescence and cathodoluminescence shows new contributions increasing with superlinear response to the excitation intensity. The observed contributions are discussed in terms of radiative decay of biexcitons, exciton-exciton scattering (P band), and electron hole plasma.

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