HL 18: Impurities/amorphous semiconductors
Dienstag, 24. März 2009, 12:00–13:00, POT 151
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12:00 |
HL 18.1 |
Pulsed electrically detected magnetic resonance study of spin relaxation and recombination in thin-film silicon solar cells — •Matthias Fehr, Jan Behrends, Alexander Schnegg, Klaus Lips, Bernd Rech, Oleksandr Astakhov, and Friedhelm Finger
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12:15 |
HL 18.2 |
First-principles calculations on self-diffusion in indium oxide — •Péter Ágoston, Paul Erhart, Andreas Klein, and Karsten Albe
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12:30 |
HL 18.3 |
Structural modification of swift heavy ion irradiated amorphous Ge layers — •Werner Wesch, Claudia S. Schnohr, Patrick Kluth, Zohair S. Hussain, Leandro L. Araujo, R. Giulian, David J. Sprouster, Aydan P. Byrne, and Mark C. Ridgway
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12:45 |
HL 18.4 |
Ab-initio calculations of hyperfine parameters for various Si-dangling bond models — •Gernot Pfanner, Christoph Freysoldt, and Jörg Neugebauer
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