Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 21: Devices

HL 21.7: Vortrag

Dienstag, 24. März 2009, 15:45–16:00, BEY 81

First prototype of a novel memory device based on self-organized quantum dots — •Andreas Marent¹, Tobias Nowozin¹, Martin Geller², Johannes Gelze¹, and Dieter Bimberg¹ — ¹Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin — ²Fachbereich Physik und CeNIDE, Universität Duisburg-Essen , Lotharstrasse 1, 47048 Duisburg

We have developed a memory concept (QD-Flash) based on self-organized quantum dots (QDs) [1] with the potential to overcome the restrictions of nowadays most important semiconductor memory, the Flash-memory. The main disadvantage of the Flash-memory results from the use of Si/SiO₂ which leads to a fundamental trade-off between write time and storage time. In contrast, using III-V semiconductors in the QD-Flash, ultra fast write times (< ns) in combination with a long storage time (>> 10 years) can be realized.

We demonstrate a first prototype of the QD-Flash with full functionality using InAs-QDs in Al_0.9Ga_0.1As as memory units. The performance of the prototype has been evaluated up to room temperature. Read out of the stored information was successfully realized by measuring the resistance of a two-dimenional hole gas formed in a GaAs/Al_0.9Ga_0.1As quantum well embedded below the QD-layer.

[1] M. Geller, A. Marent, and D. Bimberg, Auf Halbleiter-Nanostrukturen basierender nicht-flüchtiger Speicher "A non-volatile memory based on semiconductor nanostructure", CPT patent application, submitted (2006).