Dresden 2009 –
wissenschaftliches Programm
HL 22: Focused Session: Semi- and nonpolar group III nitrides II
Dienstag, 24. März 2009, 14:00–16:30, BEY 118
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14:00 |
HL 22.1 |
Topical Talk:
Optical anisotropy of nitride semiconductors — •Rüdiger Goldhahn
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14:30 |
HL 22.2 |
Topical Talk:
Growth on nonpolar and semipolar GaN: The substrate dilemma — •T. Wernicke, M. Weyers, and M. Kneissl
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15:00 |
HL 22.3 |
Topical Talk:
Microscopic Correlation of Structural, Electronical and Optical Properties of semi- and non-polar grown Group-III-Nitrides — •Frank Bertram
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15:30 |
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15 min. break
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15:45 |
HL 22.4 |
Fabrication of high quality semipolar GaN on full 2 inch for green light emitters — •Thomas Wunderer, Frank Lipski, Stephan Schwaiger, Ferdinand Scholz, Michael Wiedenmann, Martin Feneberg, and Klaus Thonke
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16:00 |
HL 22.5 |
Characterization of photoluminescence (PL) emission from semipolar {1-101} InGaN quantum wells — •Hans-Jürgen Möstl, Clemens Vierheilig, Ulrich T. Schwarz, Thomas Wunderer, Stephan Schwaiger, Frank Lipski, and Ferdinand Scholz
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16:15 |
HL 22.6 |
GaInN quantum wells with high indium concentrations on polar and nonpolar surfaces — •Holger Jönen, Torsten Langer, Daniel Dräger, Lars Hoffmann, Heiko Bremers, Uwe Rossow, Sebastian Metzner, Frank Bertram, Jürgen Christen, and Andreas Hangleiter
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