Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 27: GaN: preparation and characterization I
HL 27.11: Vortrag
Mittwoch, 25. März 2009, 12:30–12:45, BEY 81
Spectral behaviour of semipolar GaInN/GaN on {11 2 2} and {1 1 01} semipolar facets — •Michael Wiedenmann1, Martin Feneberg1, Rolf Sauer1, Klaus Thonke1, Thomas Wunderer2, Stephan Schwaiger2, Frank Lipski2, and Ferdinand Scholz2 — 1Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm
We present cathodoluminescence measurements on GaInN/GaN single quantum wells grown on different semipolar facets. These semipolar facets were formed via selective epitaxy on a GaN template with hexagonally ordered mask patterns. The intentionally grown inverse pyramids possess {11 2 2} and {1101} crystal planes. The optical properties of the quantum well on the different facets are investigated by spatially resolved cathodoluminescence spectroscopy. Strong shifts of the quantum well luminescence are found within individual facets, which are discussed in terms of concentration gradients and quantum well thickness changes.