Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 27: GaN: preparation and characterization I

HL 27.6: Vortrag

Mittwoch, 25. März 2009, 11:00–11:15, BEY 81

Sub micrometer photoluminescence fluctuations in green light emitting InGaN/GaN quantum wells — •Julia Danhof¹, Clemens Vierheilig¹, Ulrich Theodor Schwarz¹, Tobias Meyer², Matthias Peter², Berthold Hahn², Markus Maier³, and Joachim Wagner³ — ¹Institute for Experimental and Applied Physics, University of Regensburg, D-93040 — ²Osram Opto Semiconductors GmbH, Leibnizstr. 4, D-95055 — ³Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastrasse 72, D-79108

For green light emitting InGaN/GaN multiple quantum well samples a correlation of surface morphology and photoluminescence measurements has been established by comparing atomic force microscopy images with PL maps. Of main interest here are threading dislocation. Three samples with nominally the same quantum well (QW) structures but different substrates and threading dislocation densities are compared. Emitted wavelengths lay between 510 nm and 520 nm. Green light emitting QWs usually show a meandering structure on micro photoluminescence maps. For the sample the lowest dislocation density pinhole scans were performed in order to address the issue of charge carrier diffusion length within the meandering structure.