Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 28: ZnO: preparation and characterization I

HL 28.1: Vortrag

Mittwoch, 25. März 2009, 09:30–09:45, BEY 118

Growth and optical properties of ZnO nanostructures grown on ZnO seed layers — •yong xie, martin feneberg, anton reiser, ingo tischer, michael wiedenmann, reinhard frey, uwe Roeder, rolf sauer, and klaus thonke — Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm

Using a ZnO seed layer, we grow well-aligned ZnO nanopillars on different substrates including a-plane sapphire, c-plane GaN, and ( 100 ) silicon. We use Atomic Force Microscopy ( AFM ) and Scanning Electron Microscopy ( SEM ) to characterize the morphology of the ZnO seed layers and of the ZnO nanopillars. Layers and nanopillars were also investigated by optical spectroscopy. For all kinds of substrates used, we find well-faceted nanopillars which are uniform along the whole length. The data indicate that they grow via the vapour-solid ( VS ) mechanism under well-controlled growth conditions. The photoluminescence of the ZnO nanopillars shows sharp near-band-edge luminescence and nearly no green or yellow band luminescence, indicating very low contamination.