Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Heterostructures

HL 3.4: Vortrag

Montag, 23. März 2009, 11:00–11:15, BEY 154

Influence of strain on Mn codoped 2DHGs — •Ursula Wurstbauer^1,2, Stefan Knott¹, Werner Wegscheider², and Wolfgang Hansen¹ — ¹Institut für Angewandte Physik, Universität Hamburg, 220355 Hamburg — ²Institut für Experimentelle und Angewandet Physik, Universität Regensburg, 93040 Regensburg

The properties of two-dimensional hole gases (2DHG) in a strained InAs quantum well structure strongly depend on the interaction of magnetic moments with itinerant holes. For low-temperature magnetotransport experiments weakly Mn codoped InAs QWs with InGaAs/InAlAs barriers and modulation-doped with Mn and/or C are grown on (001) GaAs substrates by means of molecular beam epitaxy. Metamorphic step graded buffer layers are used for strain engineering. The strain in the doping layer and QW can be precisely tailored by changing the In concentration in the buffer and the distance between buffer and active region. In the magnetic 2DHGs the strain plays an important role because band structure, incorporation of the Mn ions as well as orientation of their magnetic moments are strongly affected by the strain situation in the active QW region. We report on a detailed study of the impact of strain on morphology, doping efficiency and low-temperature magnetoresistance behaviour of such Mn co-doped 2DHGs.