Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 30: Si/Ge

HL 30.3: Vortrag

Mittwoch, 25. März 2009, 10:00–10:15, POT 51

Fabrication of Silicon Nanostructures by Laser Interference Lithography and Metal-Induced Etching — •Johannes de Boor, Nadine Geyer, Dirk Hagen, Volker Schmidt, and Ulrich Gösele — Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

Nanostructured silicon is the foundation of nowadays electronics. Trying to meet the demand for increasing device densities, much scientific and industrial effort has been spent on the fabrication of silicon nanostructures by various approaches.

We present a simple, fast, and cost-effective method to produce virtually defect- free and strictly periodic arrays of silicon nanowires and other nanostructures.

In a first step photoresist patterns with square symmetry are created by laser interference lithography. The applied frequency doubled argon-ion laser has a wavelength of 244 nm and the period of these patterns can be varied continuously between 130 nm and 1000 nm. In a second step a noble metal film is deposited onto the exposed silicon parts and the photoresist is removed. In a HF/H₂O₂ solution the silicon in contact with the metal film is dissolved in a redox reaction, i.e. the metal film sinks into the substrate. As result an array of single crystalline nanowires with narrow size distribution is formed, the diameter of the wires can be chosen between several hundred and 80 nm. By varying illumination times and angles other structures like nanofins can be formed as well, all periodic over several cm².