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Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 30: Si/Ge

Wednesday, March 25, 2009, 09:30–13:00, POT 51

09:30 HL 30.1 Comparison of the top-down and bottom-up approach to synthesise nanowire-based Si/Ge heterostructures — •Andreas Wolfsteller, Nadine Geyer, Trung-Kien Nguyen-Duc, Nikolai Zakharov, Manfred Reiche, Wilfried Erfurth, Ursel Doß, Horst Blumtritt, Peter Werner, and Ulrich Gösele
09:45 HL 30.2 Interplay between Si dangling bond states and P doping in freestanding Si nanocrystals — •Andre R. Stegner, Rui N. Pereira, Jinming Lu, Hartmut Wiggers, Martin S. Brandt, and Martin Stutzmann
10:00 HL 30.3 Fabrication of Silicon Nanostructures by Laser Interference Lithography and Metal-Induced Etching — •Johannes de Boor, Nadine Geyer, Dirk Hagen, Volker Schmidt, and Ulrich Gösele
10:15 HL 30.4 Electronic and transport properties of semiconducting nanoparticles — •Andreas Gondorf, Martin Geller, Daniel Tadych, Axel Lorke, Cedrik Meier, and Hartmut Wiggers
10:30 HL 30.5 Doping of vertical silicon nanowires by ion implantation — •Pratyush Das Kanungo, Reinhard Kögler, Nikolai Zakharov, Kien Ngyuen-Duc, Peter Werner, and Ulrich Gösele
10:45 HL 30.6 Polycrystalline silicon layers for large area electronics prepared by aluminum-induced layer exchange — •Christian Jaeger, Tobias Antesberger, Michael Algasinger, and Martin Stutzmann
11:00 HL 30.7 Electrical transport in undoped laser-crystallized polycrystalline silicon-germanium thin films — •Lars-Peter Scheller, Moshe Weizman, N. H. Nickel, and Baojie Yan
  11:15 15 min. break
11:30 HL 30.8 Strained delta SiGe Layer for increasing ON current of Tunnel Field Effect Transistors (TFET) — •Helmut Lochner, Peter Iskra, Dorota Kulaga-Egger, Martin Schlosser, Thomas Zilbauer, Torsten Sulima, and Ignaz Eisele
11:45 HL 30.9 Electronic structure and effective masses in strained silicon — •Mohammed Bouhassoune and Arno Schindlmayr
12:00 HL 30.10 Phosphorus doping by chemical vapour deposition for vertical p-MOSFETs — •Peter Iskra, Dorota Kulaga-Egger, Thomas Zilbauer, Helmut Lochner, Torsten Sulima, and Ignaz Eisele
12:15 HL 30.11 Optical spin injection and two-color interference effects in Ge — •Julien Rioux and John E. Sipe
12:30 HL 30.12 Vanadium:Silicon - an ion-beam generated diluted magnetic semiconductor? — •Sibylle Gemming, Mike B. Thieme, and Kay Potzger
12:45 HL 30.13 Properties of Vacancies in Germanium Probed by Fast Diffusing Transition MetalsLudmila Lerner and •Nicolaas Stolwijk
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