Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Quantum wires: preparation and characterization
HL 33.8: Vortrag
Mittwoch, 25. März 2009, 16:00–16:15, BEY 81
GaN and InN nanowires: Si and Mg doping — Toma Stoica1, Eli Sutter2, Ralph Meijers1, Ratan Debnath1, Kulandaivel Jeganathan1,3, Thomas Richter1, Michel Marso1,4, Hans Lüth1, and •Raffaella Calarco1 — 1Institute of Semiconductor Nanoelectronics (IBN-1), Research Centre Jülich GmbH, D-52425 Jülich, Germany, and JARA- Fundamentals of Future Information Technology — 2Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 — 3Department of Physics, Bharathidasan University, Trichirappalli - 620 025, India — 4University of Luxembourg, Faculty of Sciences, Technology and Communication - 6, rue Richard Coudenhove-Kalergi, L-1359 Luxembourg
Doping is essential for the realization of optoelectronic devices and represents a complex task if related to nanowires. We have studied GaN and InN nanowires (NWs) doped by Si and Mg obtained by catalyst-free MBE on Si(111) in N-rich conditions. Increasing the Si amount the morphology as well as the density of the wires changes. Successful n-doping of GaN nanowires has been shown by electrical and optoelectrical measurements. Due to the sensitivity of the electrical transport to the wire diameter (size dependent surface barrier), it was possible to determine the doping level of single nanowire. A small amount of Mg increases the tendency of the wires to coalesce. For InN nanowires doped with Si a reduced NWs density is observed as compared to the undoped counterpart. The Mg doping does not change the morphology of the NWs as compared to the undoped however some staking faults at the tip could be observed.