Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 34: Spin controlled transport II
HL 34.7: Vortrag
Mittwoch, 25. März 2009, 15:45–16:00, BEY 118
Theory of spin-Hall effect in HgTe — •Ewelina Hankiewicz1, Hartmut Buhmann2, Laurens W. Molenkamp2, Werner Hanke1, and Jairo Sinova3 — 1Institut für Theoretische Physik, Universität Würzburg, 97074 Würzburg ,Germany — 2Physikalisches Institut (EP3), Universität Würzburg, 97074 Würzburg, Germany — 3Department of Physics, Texas A&M University, College Station, USA
We study theoretically a ballistic transport in HgTe H-shaped nanostructures using Landauer-Büttiker formalism. We model inverted HgTe nanostructures using realistic parameters describing properly the spin-orbit splittings and effective mass in these structures. The idea of the transport measurements is as follows. When an electric current flows in one of the legs of the H-bar structure, a transverse spin current due to the intrinsic spin-Hall effect is induced in the connecting part. Subsequently, this spin current produces, due to the inverse spin-Hall effect, a voltage difference in the opposite leg of the H-bar structure which can be measured by a voltmeter. We predict that the spin-Hall effect in H-shaped HgTe/HgCdTe inverted band structure quantum wells can be significant (on the order of a few % of the excitation voltage (microvolts)) if the size of the structure is below a ballistic length.