Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Semiconductor Laser
HL 35.12: Vortrag
Mittwoch, 25. März 2009, 17:15–17:30, BEY 154
Towards green lasing: polar and nonpolar — •Alexander Daniel Dräger1, Holger Jönen1, Uwe Rossow1, Heiko Bremers1, David Schenk2, Pierre Demolon2, Jean-Yves Duboz2, Brian Corbett3, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, TU Braunschweig, Germany — 2CRHEA-CNRS , Valbonne, France — 3Tyndall National Institute, Cork, Ireland
While GaInN based violet-blue laser diodes are by now commercially available in large quantities and reach high output powers and long lifetimes, a green laser based on the same material system is not yet achieved. The aim of our work is to realize a green emitting laser. Therefore we investigated laser structures grown on SiC, sapphire and GaN substrates using the variable stripe length technique for gain measurement. Here we focus on two major problems that arise for laser diodes emitting in the green spectral range: the increase of the indium composition in the quantum well to 35% and above and the decrease of the optical confinement due to the decreased refractive index contrast between AlGaN and GaN. We present laser stuctures with high indium containing QW as well as with enhanced optical confinement.
Furthermore we grew and investigated structures on nonpolar substrates such as m-plane SiC. We compare the results of these measurements with those on similar structures grown on polar substrates and show the necessary changes to the structure for the growth on nonpolar substrates.