Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Semiconductor Laser
HL 35.8: Vortrag
Mittwoch, 25. März 2009, 16:00–16:15, BEY 154
GaAs-based high power tapered amplifiers in an external cavity setup for frequency doubling — •Christian Schilling, Ralf Ostendorf, Gudrun Kaufel, Rudolf Moritz, Hans-Joachim Wagner, and Oliver Ambacher — Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany
A range of future applications, especially laser TV, calls for robust and compact green laser sources. One promising approach is the conversion of infrared laser radiation generated by semiconductor laser diodes into green light by frequency doubling. Since the conversion efficiency of this nonlinear optical process depends superlinearly on the incident pump power density, the initial laser source has to provide a high output power combined with a good beam quality and a narrow line width. Frequency stabilized tapered amplifiers in an external cavity setup can meet these demands.
Thus, we have fabricated diode lasers based on the GaInAs/AlGaAs material system consisting of an index-guided ridge wave guide section and a gain-guided tapered section. The centre wavelength is around 1064 nm. A beam propagation factor of M2<2 is measured at a maximum output power of 3.5 W. Wavelength tuning in the range from 1030 nm to 1070 nm is achieved by the use of an external diffraction grating in Littrow configuration with both laser facets anti-reflection coated. A split contact design enables us to separately adjust the currents in the ridge- and the taper section, thus allowing for a rapid modulation of the optical output power.