Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: ZnO: preparation and characterization II
HL 36.7: Vortrag
Mittwoch, 25. März 2009, 15:45–16:00, POT 51
Nitrogen doping of ZnO — •Michael Hofmann1, Melanie Pinnisch1, Andreas Laufer1, Sebastian Zöller1, Sebastian Eisermann1, Stefan Lautenschläger1, Bruno K. Meyer1, Gordon Callison2, Markus R. Wagner2, and Axel Hoffmann2 — 1Ist physics insitute, Justus Liebig University Gießen — 2institute for semiconductor physics, Hardenbergstraße, Berlin
The controlled incorporation of acceptors into the ZnO matrix is still a not well understood obstacle for the fabrication of bipolar ZnO devices. We investigated the incorporation of nitrogen using low groth temperatures, different nitrogen percursors and polar or non polar ZnO surfaces. To characterize our thin films we used Raman spectroscopy, low temperature photoluminescence and secondary ion mass spectrometry measurements. It turned out that certain conditions, especially substrate polarity and temperature, favour the nitrogen incorporation.