Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: II-VI semiconductors
HL 4.5: Vortrag
Montag, 23. März 2009, 11:15–11:30, POT 51
High quality junctions by interpenetration of vapor liquid solid grown nanostructures for microchip integration. — Seid Jebril1, Hanna Kuhlmann1, Sven Müller2, Carsten Ronning3, Lorenz Kienle4, Viola Duppel5, and •Rainer Adelung1 — 1Funktionale Nanomaterialien, CAU Kiel, Kaiserstr. 2, D-24143 Kiel — 2Nanowires and thin films, II. Physikalisches Institut, Friedrich-Hund-Platz 1, D-37077 Göttingen — 3Institute for Solid State Physics, Universität Jena, Max-Wien-Platz 1, D-07743 Jena — 4Synthese und Realstruktur, CAU Kiel, Kaiserstr. 2, D-24143 Kiel — 5MPI für Festkörperforschung, Heisenbergstr. 2, D-70569 Stuttgart
The usability of nanostructures in electrical devices like gas sensors depends critically on the ability to form high quality contacts and junctions. For the fabrication of various nanostructures, vapor-liquid-solid (VLS) growth is a wide spread and very efficient technique. However, forming contacts with the VLS grown structures to utilize them in a device is still tedious, because either the substrate has to be epitaxial to the VLS material or a manual alignment is necessary. Here we demonstrate the contact formation by simply using the ability of individual crystals to interpenetrate each other during the straight forward VLS growth. This allows growing VLS structures directly on two neighboring gold circuit paths of a microchip; bridges over predefined gaps will be formed. Moreover, TEM investigations confirm the high quality of the crystalline junctions that allow demonstrations as UV and hydrogen-sensor. The VLS devices are compared with conventional produced [1] ZnO nanowires. [1] S. Jebril et al. Small,(2008)in press