Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 43: Photonic crystals I
HL 43.9: Vortrag
Donnerstag, 26. März 2009, 12:00–12:15, POT 151
Feature size reduction of silicon inverted direct laser written photonic crystal structures — •Isabelle Staude1,2, Martin Hermatschweiler1,3, Georg von Freymann1,3, and Martin Wegener1,2,3 — 1DFG-Centrum für Funktionale Nanostrukturen (CFN), Universität Karlsruhe (TH), 76128 Karlsruhe — 2Institut für Angewandte Physik, Universität Karlsruhe (TH), 76128 Karlsruhe — 3Institut für Nanotechnologie, Forschungszentrum Karlsruhe GmbH, 76021 Karlsruhe
Direct laser writing of photonic crystal polymer templates in combination with a subsequent silicon double inversion procedure allows for the fabrication of high quality photonic band gap materials [1]. However, for structures made along these lines, the fundamental band gap has so far been located in the spectral range well above 2 microns wavelength, disqualifying the procedure for applications at telecommunication wavelengths. We could now demonstrate experimentally that feature sizes can be reduced with an improved fabrication scheme. Modifications mainly affect the pre- and post-exposure treatment of the employed photoresist SU-8. The crucial step consists of omitting the standard post-exposure bake relying on optical curing as suggested in [2]. In this manner we have realized silicon woodpile photonic crystal structures with 600 nm lateral rod distance showing prominent photonic stop bands centred around 1.4 microns wavelength, where suppression of transmittance of up to two orders of magnitude is achieved.
[1] N. Tétreault et al., Adv. Mater. 18 (4), 457 (2006)
[2] K. K. Seet et al., Appl. Phys. Lett.. 89 (2), 024106 (2006)