Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.45: Poster
Donnerstag, 26. März 2009, 15:00–17:30, P2
Self-catalyzed molecular beam epitaxy growth and electrical characterization of InAs nanowires — •Sonja Heiderich1,2, Mihail Ion Lepsa1, Jakob Wensorra1, Thomas Richter1, Hans Lüth1, and Detlev Grützmacher1 — 1Institute of Bio- and Nanosystems (IBN-1) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, D-52425 Jülich — 2Universität Hamburg, Institut für Angewandte Physik, Jungiusstr. 11, D-20355 Hamburg
Semiconductor nanowires (NW) have become an attractive research field both for novel device concepts and the investigation of fundamental physical aspects regarding the electronic transport in quasi-one-dimensional quantum systems. InAs NW present a special interest related to the material related properties: low effective mass, narrow gap, high electron mobility and strong electron accumulation layer on its surface. Based on previous experiences obtained for the growth of GaAs NW by molecular beam epitaxy (MBE, we have successfully grown InAs NW using In droplets as a seed. The NW have been grown both on InAs and GaAs (100) substrates covered with a thin hydrogen silsesquioxan (HSQ) film. After the growth, they have been transferred on a Si substrate with SiO2 on the surface. By mean of e-beam lithography, the NW have been connected to large pads using nonalloyed Ti/Au metallization. DC electrical measurements carried out at room temperature show ohmic, linear I-V characteristics and low resistance. Using a field effect transistor configuration with back gate, the nanowire carrier concentration and mobility have been estimated.