Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.48: Poster
Donnerstag, 26. März 2009, 15:00–17:30, P2
MOVPE growth studies for InGaN quantum dots — •Michael Högele1, Christian Meißner1,2, Simon Ploch1, Markus Pristovsek1, and Michael Kneissl1 — 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, EW6-1, 10623 Berlin — 2ISAS - Institute for Analytical Sciences, Albert-Einstein-Str. 9, 12489 Berlin
The growth of InGaN for uncapped quantum dots (QDs) on GaN/sapphire templates was studied in a horizontal and a close coupled showerhead metal-organic vapour phase epitaxy (MOVPE). At a reactor pressure of 100 mbar and a N2 atmosphere the growth temperature was varied between 620∘C and 740∘C. For a fixed ammonia partial pressure of 2500 Pa different ratios of trimetylindium (TMIn) and trimethylgallium (TMGa) or triethylgallium (TEGa) were used. The InGaN growth process was investigated by in-situ spectroscopic ellipsometry (SE). After growth the samples were analysed by X-ray diffraction (XRD) and atomic force microscopy (AFM).
For pure InN quantum dots we found a Volmer-Weber growth mode. With increasing gallium content in the InGaN nanostructures a transition to the Stranski-Krastanov growth mode is expected due to the decreasing lattice mismatch to the GaN templates.