Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.84: Poster
Donnerstag, 26. März 2009, 15:00–17:30, P2
Influence of thermal annealing and light soaking on the electronic properties and device performance of Cu(In,Ga)Se2 thin film solar cells — •David Adelmann1, Nils Könne1, Konstantin Kloppstech1, Janet Neerken1, Martin Knipper1, Jürgen Parisi1, Robert Kniese2, and Michael Powalla2 — 1Energy- and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, D-26111 Oldenburg, Germany — 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung (ZSW), Industriestr. 6, D-70565 Stuttgart, Germany
We have investigated the effect of mid-temperature annealing and light soaking on the metastable device performance of Cu(In,Ga)Se2 thin film solar cells. Thermal treatments at 85∘C and 165∘C as well as exposure to intense broadband photon flux have been carried out under inert gas atmosphere. A variety of identically processed devices have been investigated by measurements of current-voltage, capacitance *voltage and their spectral response. The changes of the device performance as well as of the diode characteristics upon exposure to heat and light are discussed. Moreover, thermal annealing was found to induce a significant shift of the activation energy of electronic defect states as confirmed by impedance spectroscopy. Although these studies are not finished yet we will try to deliver a consistent explanation of our experimental findings.