Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 48: Poster 2
HL 48.85: Poster
Donnerstag, 26. März 2009, 15:00–17:30, P2
Characterization of Cu(In,Ga)S2-thin film solar cells with varied gallium concentration — •Stephanie Malek1, Janet Neerken1, Martin Knipper1, Saoussen Merdes2, Roland Mainz2, Ingo Riedel1, and Jürgen Parisi1 — 1Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, D-26111 Oldenburg, Germany — 2Helmholtz-Zentrum Berlin für Materialien und Energie, Glienicker Straße 100, D-14109 Berlin, Germany
During the last decades interest in thin film solar cells based on chalcopyrite semiconductors (e.g. Cu(In,Ga)(S,Se)2) has steadily increased. Particularly, chalcopyrite compounds exclusively based on sulfides are of interest because of their low cost potential as compared to selenium-containing devices. In this contribution we present recent investigations of Cu(In,Ga)S2 thin film solar cells with varied gallium incorporation in the absorber layer. Doping the absorber with gallium has twofold meaning: moderate gallium concentrations lower the increase of the efficiency by decreasing the band gap energy while high concentrations result in a decrease of the open circuit voltage. We investigate the effects of Ga-doping by admittance spectroscopy and capacity-voltage measurements. These methods were chosen to get information about the local doping concentration and activation energies of the traps.