Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 48: Poster 2

HL 48.90: Poster

Donnerstag, 26. März 2009, 15:00–17:30, P2

Electronic contacts to nanostructures by FIB-deposited metals — •Sebastian Thunich, Leonhard Prechtel, and Alexander Holleitner — Technische Universität München, Walter Schottky Institut, Am Coulombwall 3, 85748 Garching, Germany

Focused ion beam (FIB) lithography is a field of growing interest, as it allows etching as well as the deposition of insulating and conducting films on a submicron scale. We show that nanostructures, such as carbon nanotubes, can be electronically contacted using ion beam induced deposition (IBID) and we provide a systematic characterization of the obtained deposits. For our work, we used a 30kV Ga⁺ FIB system (NVision40, Zeiss) together with tungsten hexacarbonyl [W(CO)6], a common precursor for conductive deposits. Generally, the yield of the presented method strongly depends on several beam and scanning parameters, such as beam current, pixel size and dwell time, as well as substrate composition. For the purpose of electric contacts to nanostructures, a low resistivity and a low contact resistance also to gold electrodes is required. We have found resistivity of tungsten deposits to be ∼ 5 Ω µm, and the contact resistance to vary between 30 Ω and 100 Ω.