Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 5: Photovoltaic
HL 5.10: Vortrag
Montag, 23. März 2009, 13:00–13:15, POT 151
Carrier collection efficiency in chalcopyrite solar cells with varied absorber layer thickness — •Heiner Lendzian1, Janet Neerken1, Martin Knipper1, Jürgen Parisi1, Ingo Riedel1, Stefan Jost2, Thomas Dalibor2, and Jörg Palm2 — 1Energy- and Semiconductor Research Laboratory, Department of Physics, Carl von Ossietzky University of Oldenburg, D-26111 Oldenburg, Germany — 2AVANCIS GmbH & Co. KG, Otto-Hahn-Ring 6, Gebäude 31, D-81739 Munich, Germany
In this contribution we examine the effect of thickness-reduced absorber thin films employed in efficient chalcopyrite solar cells on the presence of defect states and photon conversion efficiency as well as the inherent limitation of carrier collection lengths. The investigated solar cells were produced in a well controlled and reliable pilot line and were characterized by means of current-voltage and capacitance-voltage profiling. Furthermore, the spectral absorption coefficient was measured and the resulting absorption depth is compared to the results obtained from spectral response measurements. The analysis yields an accurate determination of effective carrier collection lengths and thereby a good estimate of optimal absorption layer thicknesses.