Dresden 2009 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 53: Transport properties

HL 53.1: Talk

Friday, March 27, 2009, 10:15–10:30, POT 151

Electronic properties of crystalline phase change materials — •Michael Woda, Peter Jost, Stephan Kremers, Philipp Merkelbach, Theo Siegrist, and Matthias Wuttig — I. Physikalisches Institut (1A), RWTH Aachen, 52056 Aachen, Germany

In phase change materials (PCM) the pronounced contrast between the amorphous and crystalline state in form of optical and electrical properties is combined with a fast phase transition on a ns timescale. This combination opens the possibility of memory applications. PCM are already employed in rewritable optical data storage and are used for the Phase change RAM (PCRAM). This is a promising candidate to become the next generation non-volatile solid state electronic memory. In PCRAMs it is important to have stable and well defined resistance levels. Here we present a comparative study of different PCM alloys in order to determine the origin of different crystalline resistivities upon thermal annealing, which seem not to be governed by grain properties. We investigate different degrees of crystallinity with various techniques including van der Pauw, Hall, ellipsometry, FTIR and XRD measurements.