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HL: Fachverband Halbleiterphysik
HL 53: Transport properties
HL 53.4: Vortrag
Freitag, 27. März 2009, 11:00–11:15, POT 151
A tunable self-switching in-plane diode in a 2D-system — •Simone Voßen1, Arkadius Ganczarczyk1, Martin Geller1, Axel Lorke1, Dirk Reuter2, and Andreas Wieck2 — 1Experimental Physics and CeNIDE, Universität Duisburg-Essen — 2Solid State Physics, Ruhr-Universität Bochum
Patterning on the nanometer scale enables to produce devices with new functionalities that are mainly given by the sample geometry. We fabricated a device geometry in a two-dimensional electron gas (2DEG) that uses the so-called self-switching effect to realize a tunable diode-like structure [1]. The sample consists of a 400nm wide channel in a 2DEG confined by etched insulating trenches. An asymmetric potential profile causes the self-switching effect. The working principle is based on lateral pinch off, which modulates the width of the depletion zones of the narrow etched channel. Depending on the direction of the applied voltage along the channel, the channel opens or closes, resulting in diode-like behavior.
The tunability of the self-switching device (SSD) is achieved by two in-plane side gates, which modulate the depletion zones of the electron channel. We are able to tune the characteristics of the SSD for instance the on-voltage of the diode from 0 V up to 0.7 V in comparison to the fixed on-voltage of a standard p-n diode.
Additionally we examine the frequency operations of the SSD and analyze its behavior in a magnetic field.
[1] A.M. Song, M. Missous, P. Omling, A.R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 83, 1881-1883 (2003)