Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.14: Poster
Montag, 23. März 2009, 14:30–17:00, P2
An x-ray Raman scattering study of the temperature–induced disproportionation in a-SiO — •Omid M. Feroughi1, Christian Sternemann1, Achim Hohl2, Christoph J. Sahle1, Heiko Conrad1, Joe Bradley3, Mali Balasubramanian4, Jerry Seidler3, and Metin Tolan1 — 1Fakultät Physik / DELTA, Technische Universität Dortmund, D-44221 Dortmund, Germany — 2Institute for Materials Science, Darmstadt University of Technology, D-64287 Darmstadt, Germany — 3University of Washington, Department of Physics, Seattle, WA 98195 USA — 4Argonne National Lab, 9700 Cass Avenue, Argonne, IL 60439 USA
The study of bulk amorphous silicon monoxide (a–SiOx with x ≈ 1) attracted great interest over the past years due to its relevance for opto– and micro–electronic applications. Native a–SiO shows a temperature–induced disproportionation in which regions of Si and SiO2 grow by coalescence at the cost of the sub–oxides contained in the bulk material resulting in a formation of Si nanocrystals. This disproportionation is studied by means of nonresonant x–ray Raman scattering (XRS) at the Si L2,3–edges in the temperature range between 600∘C to 1200∘C. XRS probes soft x–ray absorption edges using incident x–ray energies between 7 and 12 keV which yields a high bulk sensitivity. Such measurements allow a quantitative assessment of the sub–oxide contributions in native and annealed a–SiO to characterize the disproportionation process. Differently annealed a–SiO samples were also examined with x–ray diffraction which shows that bulk a–SiO is amorphous at least up to 850∘C and Si nanocrystals have formed at about 950∘C.