Dresden 2009 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.17: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Optical Selection Rules in Silicon — •Hauke Horn, Jens Hübner, and Michael Oestreich — Institute for Solid State Physics, Leibniz University Hannover, Appelstr. 2, 30167 Hannover, Germany

We use selective optical excitation around the direct band gap of silicon at room temperature and polarization resolved detection of the photoluminescence from the indirect band gap transition to probe the optical spin selection rules in this important semiconductor material. The degree of circular polarization from the indirect transition is monitored, while the excitation from the top most valence band Γ₈⁺ to the lowest conduction band Γ₆⁻ at the center of the Brillouin zone is tuned to the excitation from the split-off band Γ₇⁺. To shorten the carrier lifetime to less than the spin relaxation time a biased silicon photodiode is used as sample.