Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.32: Poster
Montag, 23. März 2009, 14:30–17:00, P2
Towards Galliumnitride nanowire field-effect transistors — •Jörg Kinzel1, Jens Ebbecke2, Hubert Krenner1, Raffaela Calarco3, Toma Stoica3, and Achim Wixforth1,4 — 1Lehrstuhl für Experimentalphysik 1, Universität Augsburg, Germany — 2School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, United Kingdom — 3Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH, Germany, and JARA- Fundamentals of Future Information Technology — 4Center for NanoScience, Ludwig-Maximilians-Universität, München, Germany
Group III-nitride nanowires (NWs) have drawn particular interest over the past years owing their potential for wide-spread applications in nano-electronics and optoelectronics at ambient temperatures. We report on recent progress on the realization of field effect transistors using doped GaN nanowires grown by molecular beam epitaxy1. We define metal source-drain and top gate electrodes by electron-beam lithography and a lift-off technique. Samples are characterized by temperature- and bias-dependent conductivity measurements.
[1] R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, and H. Lüth, Nano Letters, 2005 Vol. 5, No. 5, 981-984