Dresden 2009 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.38: Poster
Montag, 23. März 2009, 14:30–17:00, P2
Fabrication and Characterization of Cu-Doped GaN — •Philipp Ganz1,2, Christoph Sürgers2,3, and Daniel M. Schaadt1,2 — 1Universität Karlsruhe, Institut für Angewandte Physik, 76131 Karlsruhe, Germany — 2Universität Karlsruhe, DFG-Center for Functional Nanostructures, 76131 Karlsruhe, Germany — 3Universität Karlsruhe, Physikalisches Institut, 76131 Karlsruhe, Germany
Semiconductor based spintronics may be implemented using InN quantum dots, which show long and temperature in-dependent spin-life times. To inject spins electrically into these quantum dots, a spin alignment layer which yields high spin-polarizations at room temperature is essential for realistic applications. A possible material for a nitride based spin aligner is Cu-doped GaN. Theoretical predictions show the possibility of ferromagnetism and high spin-polarization for certain Cu arrangements. Initial experimental results have already indicated ferromagnetism. However, the origin of the ferromagnetism is still under debate. Additionally, the influence of defects on the ferromagnetism in Cu doped nitrides is still unclear. We have used density functional theory to verify previous theoretical predictions and to investigate the effects of various parameters on the ferromagnetic nature of the material. Additionally, we have investigated the growth of Cu-doped GaN by molecular beam epitaxy and the influence of growth parameters, such as the metal to nitrogen flux ratio, Cu to Ga flux ratio and growth temperature, on the magnetic properties.