Dresden 2009 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: Poster 1
HL 9.45: Poster
Montag, 23. März 2009, 14:30–17:00, P2
MBE growth of GaAs/GaMnAs core-shell nanowires — •Andreas Rudolph1, Marcello Soda1, Matthias Kiessling1, Benedikt Bauer1, Dieter Schuh1, Tomasz Wojtowicz2, Werner Wegscheider1, and Elisabeth Reiger1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — 2Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warszawa, Poland
We investigate the growth conditions of core-shell nanowires consisting of a GaAs core and a magnetic GaMnAs shell. The diluted magnetic semiconductor GaMnAs is of great interest for spintronics applications as it allows a high degree of spin injection into GaAs. However, as the typical growth temperature of GaMnAs is very low it is not compatible with typical growth conditions for axial growth of nanowires. The GaAs core NW is grown on GaAs(111)B substrates using the gold catalyst technique. To gain control over the position and the diameter of the nanowire we recently started nanostructuring the Au film by electron beam lithography. In a second step the GaMnAs is grown on the <110> facets of the GaAs nanowire using typical growth parameters of the 2D growth on GaAs(110). We study the influence of various growth parameters, e.g. the substrate temperature, the flux ratio Ga/As4... on the GaMnAs shell growth. The nanowires are characterized by SEM, TEM and SQUID.