Dresden 2009 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 9: Poster 1

HL 9.96: Poster

Montag, 23. März 2009, 14:30–17:00, P2

Observation of single quantum dots in GaAs/AlAs micropillar cavities — •Philipp Burger, Matthias Karl, Dongzhi Hu, Daniel M. Schaadt, Heinz Kalt, and Michael Hetterich — Institut für Angewandte Physik and DFG Center for Functional Nanostructures (CFN), Universität Karlsruhe (TH), 76128 Karlsruhe, Germany

In our contribution we present the fabrication steps of micropillar cavities and their optical properties. The layer structure consisting of a GaAs-based lambda-cavity sandwiched between two GaAs/AlAs distributed Bragg reflectors is grown by molecular-beam epitaxy. In(Ga)As quantum dots, emitting at around 950 nm, are embedded as optically active medium in the middle of the cavity. The pillars are milled out of this structure with a focused ion-beam. A confocal micro-photoluminescence set-up allows to measure optical cavity modes as well as single quantum dots in the pillars when using low excitation intensity. This enables us to observe a (thermal) shift of the single quantum dot peaks relative to the cavity mode. In addition, we increased the numerical aperture of the set-up (originally 0.4) with a solid immersion lens up to 0.8. Thus we are able to detect the fundamental mode of pillars with very small diameters. Furthermore, the collection efficiency increases substantially.