Dresden 2009 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 24: Magnetic Semiconductors
MA 24.3: Vortrag
Mittwoch, 25. März 2009, 15:15–15:30, HSZ 401
Room temperature ferromagnetism in carbon-implanted ZnO — •Shengqiang Zhou1, Qingyu Xu2, Kay Potzger1, Juergen Fassbender1, Manfred Helm1, Holger Hochmuth3, Michael Lorenz3, Marius Grundmann3, and Heidemarie Schmidt1 — 1Forschungszentrum Dresden-Rossendorf, Bautzner Landstraße 128, 01328 Dresden — 2Southeastern University, Nanjing 211189, China — 3Universität Leipzig, Linnéstraße 5, 04103 Leipzig
Transition metal (TM) doped ZnO has been extensively investigated due to its potential application as a diluted magnetic semiconductor with Curie temperature above room temperature. After one decade effort, however, the reported results are still very controversial concerning the reproducibility and the origin of the observed ferromagnetism. H. Pan et al. reported strong room temperature ferromagnetism in C-doped ZnO films grown by pulsed laser deposition [1]. Together with the first-principles calculations, evidence is given that carbon ions substitute for oxygen and their p-orbitals contribute the local magnetic moments. In this contribution [2], we introduced carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Comparing with two reference samples, C implanted Ge and Ne implanted ZnO, which show only diamagnetism, our analysis demonstrates (1) the achievement of C-doped ferromagnetic ZnO by an alternative method, i.e. by ion implantation, and (2) the chemical involvement of carbon in the local magnetic moments is indirectly proven. [1] H. Pan et al., Phys. Rev. Lett. 99, 127201 (2007). [2] S. Zhou et al., Appl. Phys. Lett., arXiv:0811.3487 (2008).