Dresden 2009 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 32: Magnetic Thin Films III
MA 32.3: Vortrag
Donnerstag, 26. März 2009, 10:45–11:00, HSZ 403
Thickness and temperature dependent magnetization measurements on Fe3Si films on GaAs(001) — •Bernhard Krumme, Claudia Weis, Anne Warland, Carolin Antoniak, Dietger Bovenschen, Ulrich von Hörsten, Werner Keune, and Heiko Wende — Universität Duisburg-Essen, Lotharstraße 1, D-47048 Duisburg, Germany
Fe3Si is a Heusler-like system for which spin injection into GaAs at room temperature is reported. Due to its high spin polarization and the small lattice mismatch to GaAs, Fe3Si is a very interesting material for spintronics and magnetoelectronics.
In order to investigate the effects of the interface between GaAs and Fe3Si on the magnetic properties of Fe3Si we performed thickness and temperature-dependent x-ray magnetic circular dichroism (XMCD) as well as Mössbauer-spectroscopic measurements. The temperature is varied between 40 K and 350 K and the thickness ranges from bulklike films (80 Å) down to the ultrathin limit (7 Å). Mössbauer spectra were recorded to characterize the chemical ordering in the Fe3Si films. The XMCD effect was used to measure the magnetization of the Fe3Si films and the magnetic moments of the Fe atoms were determined spin- and orbital-resolved by the sum rules. The 80 Å thick Fe3Si film yields a magnetic moment of 1.4 µB per Fe atom which is close to the expected value of 1.6 µB. However, even for the bulklike Fe3Si film on GaAs(001) the Mössbauer spectrum revealed a second Fe phase which is probably caused by an interdiffusion at the interface.
– Supported by DFG (SFB 491) and BMBF (05 ES3XBA/5).