Dresden 2009 – wissenschaftliches Programm
MM 21.3: Poster
Dienstag, 24. März 2009, 14:45–16:30, P4
Study on structural and electrical properties of Al-doped ZnO thin films prepared by sol-gel method — •Babak Nasr, Subho Dasgupta, Robert Kruk, and Horst Hahn — Forschungszentrum Karlsruhe, Institute for Nanotechnology, D-76344 Eggenstein-Leopoldshafen, Germany
The screening length of the external field is one of the critical parameters to tune the transport properties of a material. Therefore, the systems of interest are those with carrier concentrations in the same order as the induced maximum surface charge density achievable. In view of this criterion we choose Al-doped ZnO (AZO) oxides with a near metallic conductivity, and a carrier density easily controllable via Al doping. This study is an attempt to optimize conductivity of the nanocrystalline films through the Al concentration and morphology modifications.
The AZO thin films were prepared by the sol-gel process . The thin film deposition was carried out by spin-coating technique on high quality float glass substrates. The film structure and morphology were characterized by profilometer, X-ray diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy. The transport properties were measured with the four point resistance and Hall-effect measurements using standard van der Pauw geometry. The effects of precursor concentrations, annealing temperature on the structural and electrical properties are discussed.
 S. Y Chang, Y. Hsiao, Y. Huang, Surface and Coatings Technology, 202 (2008) 5416