Dresden 2009 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 28: Electronic Properties I

MM 28.2: Vortrag

Mittwoch, 25. März 2009, 10:30–10:45, IFW D

The electrical properties of anodically oxidized Ti based NWFETS and its oxygen sensor applications — •Dawit Gedamu, Seid Jebril, Arnim Schuchardt, and Rainer Adelung — Functional Nanomaterials, Institute of Materials Science, Faculty of Engineering, CAU Kiel

A number of techniques have been reported on fabrication of tunnel junction nano structures through anodization in the last decade , . The dimension of such structures can be miniaturized and controlled through the anodic voltage while anodizing. A TiO2 tunnel junction of controlled thickness is similarly produced through anodic oxidation of Ti nanowires produced in a fracture approach . By using an electrochemically grown TiO2 as a gate oxide, we demonstrate nanowire field effect transistors (NWFET) which can be further used as oxygen sensor. Although FET based sensors are undoubtedly of great importance for microelectronics smart sensors, there are limited sensor reports on FET sensor. Gas detection based on this technique relies largely on change of the metal work function in the Schottky diode or MOSFETs induced by catalytic reaction on the solid surface . Here, the oxygen sensing properties are also demonstrated.